SH7125 Datasheet, PDF (745/782 Pages) Renesas Technology Corp – Renesas 32-Bit RISC Microcomputer

Section 21 Electrical Characteristics
21.5 Flash Memory Characteristics
Table 21.14 Flash Memory Characteristics
Conditions: V_CC = AV_CC = 4.0 V to 5.5 V, V_SS = PLLV_SS = AV_SS = 0 V,
T_a = –20 to +85°C (consumer specifications),
T_a = –40 to +85°C (industrial specifications)
Item
Symbol
Min.
Typ.
Max.
Unit
Programming time*¹*²*⁴
t_P
Erase time*¹*²*⁴
t_E
—
1
10
ms/128 bytes
—
40
130
ms/4 Kbytes
block
—
300
800
ms/32 Kbytes
block
—
600
1500
ms/64 Kbytes
block
Programming time
(total) *¹*²*⁴
Σ t_P
—
1.2
3
s/128 Kbytes
—
0.6
1.5
s/64 Kbytes
Erase time (total) *¹*²*⁴
Σ t_E
—
1.3
3.5
s/128 Kbytes
—
0.7
2
s/64 Kbytes
Programming and erase time Σ t_PE
—
2.5
6.5
s/128 Kbytes
(total) *¹*²*⁴
—
1.3
3.5
s/64 Kbytes
Reprogramming count
N_WEC
100*³
—
—
Times
Notes: 1. Programming/erasure time is data-dependent.
2. Programming/erasure time does not include data transfer time.
3. Minimum number to guarantee all the characteristics after reprogramming. (Guaranteed
within the range from 1 to min. value)
4. Characteristics when reprogramming is performed within the specified number of times
including min. value.
Rev. 3.00 Sep. 27, 2007 Page 725 of 758
REJ09B0243-0300