PIC16F1847_13 Datasheet, PDF (356/440 Pages) Microchip Technology – 18/20/28-Pin Flash Microcontrollers with XLP Technology

PIC16(L)F1847
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param.
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
D110
D111
D112
D113
VIHH
IDDP
VBE
VPEW
Program Memory Programming
Specifications
Voltage on MCLR/VPP pin
Supply Current during Programming
VDD for Bulk Erase
VDD for Write or Row Erase
8.0
—
2.7
VDDMIN
—
9.0
V (Note 3)
—
10
mA
—
VDDMAX
V
—
VDDMAX
V
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
1.0
—
mA
D115 IDDPGM Current on VDD during Erase/Write
—
5.0
—
mA
Data EEPROM Memory
D116 ED
Byte Endurance
100K
—
—
E/W -40C to +85C
D117 VDRW VDD for Read/Write
VDDMIN
—
VDDMAX
V
D118 TDEW Erase/Write Cycle Time
—
4.0
5.0
ms
D119 TRETD Characteristic Retention
—
40
—
Year Provided no other
specifications are violated
D120
TREF
Number of Total Erase/Write
Cycles before Refresh
1M
10M
—
E/W -40°C to +85°C (Note 2)
Program Flash Memory
D121 EP
Cell Endurance
10K
—
—
E/W -40C to +85C (Note 1)
D122 VPRW VDD for Read/Write
VDDMIN
—
VDDMAX
V
D123 TIW Self-timed Write Cycle Time
—
2
2.5
ms
D124 TRETD Characteristic Retention
—
40
—
Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance.
3: Required only if single-supply programming is disabled.
DS40001453D-page 356
Preliminary
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