PIC17C75X Datasheet, PDF (225/320 Pages) Microchip Technology – High-Performance 8-Bit CMOS EPROM Microcontrollers

PIC17C75X
20.1 DC CHARACTERISTICS:
PIC17C752/756-25 (Commercial, Industrial)
PIC17C752/756-33 (Commercial, Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40˚C ≤ TA ≤ +85˚C for industrial and
0˚C ≤ TA ≤ +70˚C for commercial
Param.
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D001 VDD Supply Voltage
4.5
– 6.0
V
D002 VDR RAM Data Retention 1.5 * – –
Voltage (Note 1)
V Device in SLEEP mode
D003
VPOR VDD start voltage to
–
ensure internal
Power-on Reset signal
VSS –
V See section on Power-on Reset for
details
D004
SVDD
VDD rise rate to
ensure proper
operation
0.085 * –
– V/ms See section on Power-on Reset for
details
D005
VBOR Brown-out Reset
voltage trip point
3.6
– 4.3
V
D006
VPORTP Power-on reset trip
point
– 1.8 –
V VDD = VPORTP
D010 IDD
D011
D012
D013
D015
Supply Current
(Note 2)
– TBD 6 * mA FOSC = 4 MHz (Note 4)
– TBD 12 mA FOSC = 8 MHz
– TBD 24 * mA FOSC = 16 MHz
– TBD 38 mA FOSC = 25 MHz
– TBD 50 mA FOSC = 33 MHz
D021 IPD
Power-down Current
(Note 3)
–
<1 5
µA VDD = 5.5V, WDT disabled
Module Differential
Current
D023 ∆IBOR BOR circuitry
– 300 500 µA VDD = 4.5V, BODEN enabled
D024 ∆IWDT Watchdog Timer
–
10 35 µA VDD = 5.5V
D026 ∆IAD A/D converter
–
1
–
µA VDD = 5.5V, A/D not converting
*
These parameters are characterized but not tested.
† Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD or VSS, T0CKI = VDD,
MCLR = VDD; WDT disabled.
Current consumed from the oscillator and I/O’s driving external capacitive or resistive loads needs to be con-
sidered.
For the RC oscillator, the current through the external pull-up resistor (R) can be estimated as: VDD / (2 • R).
For capacitive loads, the current can be estimated (for an individual I/O pin) as (CL • VDD) • f
CL = Total capacitive load on the I/O pin; f = average frequency the I/O pin switches.
The capacitive currents are most significant when the device is configured for external execution (includes
extended microcontroller mode).
3: The power down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-
mated by the formula IR = VDD/2Rext (mA) with Rext in kOhm.
© 1997 Microchip Technology Inc.
Preliminary
DS30264A-page 225