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PIC17C75X Datasheet, PDF (223/320 Pages) Microchip Technology – High-Performance 8-Bit CMOS EPROM Microcontrollers | |||
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PIC17C75X
20.0 PIC17C752/756 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings â
Ambient temperature under bias................................................................................................................. -55 to +125ËC
Storage temperature .............................................................................................................................. -65ËC to +150ËC
Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.5V
Voltage on MCLR with respect to VSS (Note 2).......................................................................................... -0.3V to +14V
Voltage on RA2 and RA3 with respect to VSS............................................................................................. -0.3V to +14V
Voltage on all other pins with respect to VSS .................................................................................... -0.3V to VDD + 0.3V
Total power dissipation (Note 1)................................................................................................................................1.0W
Maximum current out of VSS pin(s) - total (@ 70ËC) ............................................................................................500 mA
Maximum current into VDD pin(s) - total (@ 70ËC) ...............................................................................................500 mA
Input clamp current, IIK (VI < 0 or VI > VDD) ......................................................................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) ..............................................................................................................±20 mA
Maximum output current sunk by any I/O pin (except RA2 and RA3).....................................................................35 mA
Maximum output current sunk by RA2 or RA3 pins ................................................................................................60 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by PORTA and PORTB (combined) .................................................................................150 mA
Maximum current sourced by PORTA and PORTB (combined)............................................................................100 mA
Maximum current sunk by PORTC, PORTD and PORTE (combined) ..................................................................150 mA
Maximum current sourced by PORTC, PORTD and PORTE (combined).............................................................100 mA
Maximum current sunk by PORTF and PORTG (combined) ................................................................................150 mA
Maximum current sourced by PORTF and PORTG (combined) ...........................................................................100 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - â IOH} + â {(VDD-VOH) x IOH} + â(VOL x IOL)
Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100⦠should be used when applying a "low" level to the MCLR pin rather than pulling
this pin directly to VSS.
â NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this speciï¬cation is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
© 1997 Microchip Technology Inc.
Preliminary
DS30264A-page 223
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