TC1163 Datasheet, PDF (132/134 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller TriCore

TC1163/TC1164
Preliminary
Package and Reliability
5.3
Flash Memory Parameters
The data retention time of the TC1163/TC1164’s Flash memory (i.e. the time after which
stored data can still be retrieved) depends on the number of times the Flash memory has
been erased and programmed.
Table 5-2 Flash Parameters
Parameter
Symbol Limit Values Unit Notes
Min.
Max.
Program Flash
Retention Time,
Physical Sector¹⁾²⁾
t_RET
15
–
years Max. 1000
erase/program cycles
Program Flash
Retention Time,
Logical Sector¹⁾²⁾
t_RETL
15
–
years Max. 50
erase/program cycles
Data Flash Endurance N_E
(128 Kbyte)
15 000 –
–
Max. data retention
time 2 years
Data Flash Endurance, N_E8
EEPROM Emulation
(8 × 16 Kbyte)
120 000 –
–
Max. data retention
time 2 years
Programming Time per t_PR
–
Page³⁾
5
ms –
Program Flash Erase t_ERP
–
Time per 256-Kbyte
sector
5
s
f_CPU = 80 MHz
Data Flash Erase Time t_ERD
–
per 16-Kbyte sector
0.625 s
f_CPU = 80 MHz
Wake-up time
t_WU
4300 × 1/f_CPU + 40µs
1) Storage and inactive time included.
2) At average weighted junction temperature T_J = 100 °C.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5ms.
Data Sheet
128
V1.0, 2008-04