MC68HC908QC16_07 Datasheet, PDF (255/274 Pages) Freescale Semiconductor, Inc – Microcontrollers

Memory Characteristics
19.17 Memory Characteristics
Characteristic
Symbol
Min
Typ⁽¹⁾
Max
Unit
RAM data retention voltage ⁽²⁾
FLASH program bus clock frequency
V_RDR
—
1.3
—
1
—
—
V
—
MHz
FLASH PGM/ERASE supply voltage (V_DD)
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance⁽⁶⁾
V_PGM/ERASE
f_Read(3)
t_Erase
t_MErase
t_NVS
t_NVH
t_NVHL
t_PGS
t_PROG
t_RCV(4)
t_HV(5)
—
2.7
0
3.6
4
10
5
100
5
30
1
—
10 k
—
—
4
—
—
—
—
—
—
—
—
100 k
5.5
V
8M
Hz
5.5
ms
—
ms
—
μs
—
μs
—
μs
—
μs
40
μs
—
μs
4
ms
—
Cycles
FLASH data retention time⁽⁷⁾
—
15
100
—
Years
1. Typical values are for reference only and are not tested in production.
2. Values are based on characterization results, not tested in production.
3. f_Read is defined as the frequency range for which the FLASH memory can be read.
4. t_RCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to 0.
5. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_NVS + t_NVH + t_PGS + (t_PROG x 32) ≤ t_HV maximum.
6. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
Endurance, please refer to Engineering Bulletin EB619.
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 3
Freescale Semiconductor
255