33742_08 Datasheet, PDF (21/70 Pages) Freescale Semiconductor, Inc – System Basis Chip with Enhanced High Speed CAN Transceiver

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.75V ≤ V2 ≤ 5.25V, 5.5V ≤ V_SUP ≤ 18V, and -40°C ≤ T_A ≤ 125°C. Typical values noted
reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CAN MODULE – SIGNAL EDGE RISE AND FALL TIMES (CANH, CANL)
Dominant State Timeout
Propagation Loop Delay TXD to RXD (Recessive to Dominant)⁽³⁶⁾
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Propagation Delay TXD to CAN (Recessive to Dominant)⁽³⁷⁾
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Propagation Delay CAN to RXD (Recessive to Dominant)⁽³⁸⁾
Propagation Loop Delay TXD to RXD (Dominant to Recessive)⁽³⁶⁾
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Propagation Delay TXD to CAN (Dominant to Recessive)⁽³⁷⁾
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Propagation Delay CAN to RXD (Dominant to Recessive)⁽³⁸⁾
Non-Differential Slew Rate (CANL or CANH)
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Bus Communication Rate
Νοτεσ
36. See Figure 8, page 22.
37. See Figure 9, page 22.
38. See Figure 10, page 22.
t _DOUT
t _LRD
t _TRD
t _RRD
t _LDR
t _TDR
t _RDR
t _SL3
t _SL2
t _SL1
t _SL0
t_BUS
200
360
520
μs
ns
60
100
210
70
110
225
80
130
255
110
200
310
ns
20
65
110
25
80
150
35
100
200
50
160
300
10
50
140
ns
ns
100
150
200
120
165
220
140
200
250
250
340
410
ns
60
125
150
65
150
190
75
180
250
200
310
460
20
30
60
ns
V/μs
4.0
19
40
3.0
13.5
20
2.0
8.0
15
1.0
5.0
10
60k
—
1.0M
bps
Analog Integrated Circuit Device Data
Freescale Semiconductor
33742
21