33742_08 Datasheet, PDF (12/70 Pages) Freescale Semiconductor, Inc – System Basis Chip with Enhanced High Speed CAN Transceiver

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75V ≤ V2 ≤ 5.25V, 5.5V ≤ V_SUP ≤ 18V, and -40°C ≤ T_A ≤ 125°C. Typical values noted
reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
TRACKING VOLTAGE REGULATOR (V2)⁽²⁰⁾
V2 Output Voltage (Capacitance = 10μF Tantalum at V2)
2.0mA ≤ I_V2 ≤ 200mA, 5.5V < V_SUP < 27V
V₂
V_DD
0.99
1.0
1.01
I_V2 Output Current (for Information Only)
Depending on External Ballast Transistor
V2 Control Drive Current Capability⁽²¹⁾
Worst Case at T_J = 125°C
I_V2
200
—
I_V2CTRL
0.0
—
mA
—
mA
10
V2LOW Flag Threshold
LOGIC OUTPUT PIN (MISO)⁽²²⁾
V_2LTH
3.75
4.0
4.25
V
Low-level Output Voltage
I_OUT = 1.5mA
V_OL
V
0.0
—
1.0
High-level Output Voltage
I_OUT = -250μA
Tri-stated MISO Leakage Current
0V < V_MISO < V_DD
V_OH
I_HZ
V_DD - 0.9
—
- 2.0
—
V
V_DD
μA
2.0
Notes
20. V2 specification with external capacitor. Stability requirement: capacitance > 42μF and ESR < 1.3Ω (tantalum capacitor), external
resistor between base and emitter required. Measurement conditions: ballast transistor MJD32C, capacitance > 10μF tantalum, 2.2kΩ
resistor between base and emitter of ballast transistor.
21. The guaranteed V2CTRL current capability is 10mA. No active current limiting is used so the actual available current may be higher.
22. Push-pull structure with tri-state condition (CS HIGH).
33742
12
Analog Integrated Circuit Device Data
Freescale Semiconductor