HB52R329E22-F Datasheet, PDF (61/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

;^{;;;;;;Full Page Read/Write Cycle}
CK
CKE
S
RE
CE
W
BA
Address
DQMB
Dout
Din
CKE
S
RE
CE
W
BA
Address
DQMB
Dout
Din
V_IH
R:a
Bank 0
Active
V_IH
R:a
Bank 0
Active
C:a
R:b
Bank 0
Read
Bank 3
Active
a a+1 a+2
High-Z
C:a
R:b
High-Z
Bank 0
Write
a a+1 a+2 a+3
Bank 3
Active
a+4 a+5
HB52R329E22-F
Read cycle
RE-CE delay = 3
CE latency = 4
Burst length = full page
= V_IH or V_IL
Burst stop Bank 3
Precharge
Write cycle
RE-CE delay = 3
CE latency = 4
Burst length = full page
= V_IH or V_IL
Burst stop Bank 3
Precharge
Data Sheet No. E0112H10
61