HB52R329E22-F Datasheet, PDF(46/66 Page) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F Datasheet, PDF (46/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F

Read with auto precharge to Write command interval

1. Different bank: When some banks are in the active state, the second write command (another bank) is

executed. However, DQMB must be set High so that the output buffer becomes High-Z before data input. The

internal auto-precharge of one bank starts at the next clock of the second command.

Read with Auto Precharge to Write Command Interval (Different bank)

Command

CL = 3

DQMB

CL = 4

Din

Dout

READ A WRIT

in B0 in B1

High-Z

in B2

in B3

bank0 bank3

Read A Write

Burst Length = 4

Note: Internal auto-precharge starts at the timing indicated by " ".

2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is

necessary to separate the two commands with a bank active command.

Data Sheet No. E0112H10

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