HB52R329E22-F Datasheet, PDF(38/66 Page) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F Datasheet, PDF (38/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F

Write with auto-precharge: In this operation, since precharge is automatically performed after completing a

burst write or single write operation, a precharge command need not be executed after each write operation. The

command executed for the same bank after the execution of this command must be the bank active (ACTV)

command. In addition, an interval of lAPW is required between the final valid data input and input of next

command.

Burst Write (Burst Length = 4)

Command ACTV

WRIT A

IRAS

ACTV

Din

in0 in1 in2 in3

lAPW

Note: Internal auto-precharge starts at the timing indicated by " ".

and an interval of tRAS (lRAS) is required between previous active (ACTV) command

and internal precharge " ".

Single Write