HB52R329E22-F Datasheet, PDF(47/66 Page) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F Datasheet, PDF (47/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

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HB52R329E22-F

Write with auto precharge to Read command interval

1. Different bank: When some banks are in the active state, the second read command (another bank) is

executed. However, in case of a burst write, data will continue to be written until one clock before the read

command is executed. The internal auto-precharge of one bank starts at the next clock of the second command.

Write with Auto Precharge to Read Command Interval (Different bank)

Command

DQMB

Din

Dout

WRIT A READ

in A0

out B0 out B1 out B2 out B3

bank0 bank3

Write A Read

Note: Internal auto-precharge starts at the timing indicated by " ".

CE Latency = 4

Burst Length = 4

2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is

necessary to separate the two commands with a bank active command.

Data Sheet No. E0112H10

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