HB52R329E22-F Datasheet, PDF (11/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Supply voltage relative to V_SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Note: 1. Respect to V_SS
Symbol
V_T
V_CC
Iout
P_T
Topr
Tstg
HB52R329E22-F
Value
Unit
Note
–0.5 to V_CC + 0.5
V
1
(≤ 4.6 (max))
–0.5 to +4.6
V
1
50
mA
18.0
W
0 to +55
°C
–50 to +100
°C
DC Operating Conditions (Ta = 0 to +55°C)
Parameter
Symbol
Min
Max
Unit
Supply voltage
Input high voltage
Input low voltage
Ambient illuminance
V_CC
3.0
3.6
V
V_SS
0
0
V
V_IH
2.0
V_CC
V
V_IL
0
0.8
V
—
—
100
lx
Notes: 1. All voltage referred to V_SS
2. The supply voltage with all VCC and V_CCQ pins must be on the same level.
3. The supply voltage with all VSS and V_SSQ pins must be on the same level.
4. V_IH (max) = V_CC + 2.0 V for pulse width ≤ 3 ns at V_CC.
5. V_IL (min) = V_CC – 2.0 V for pulse width ≤ 3 ns at V_SS.
Notes
1, 2
3
1, 4
1, 5
Data Sheet No. E0112H10
11