HB52R329E22-F Datasheet, PDF (18/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM

HB52R329E22-F
AC Characteristics (Ta = 0 to 55°C, V_CC = 3.3 V ± 0.3 V, V_SS = 0 V)
Parameter
Symbol
System clock cycle time
(CE latency = 3)
t _CK
(CE latency = 4)
t _CK
CK high pulse width
t _CKH
CK low pulse width
t _CKL
Access time from CK
(CE latency = 3)
t _AC
(CE latency = 4)
t _AC
Data-out hold time
t _OH
CK to Data-out low impedance
t _LZ
CK to Data-out high impedance
t _HZ
Data-in setup time
t _DS
Data in hold time
t _DH
Address setup time
t _AS
Address hold time
t _AH
CKE setup time
t _CES
CKE setup time for power down exit
t _CESP
CKE hold time
t _CEH
Command setup time
t _CS
Command hold time
t _CH
Ref/Active to Ref/Active command period t_RC
Active to precharge command period
t _RAS
Active command to column command t_RCD
(same bank)
Precharge to active command period
t _RP
Write recovery or data-in to precharge t_DPL
lead time
Active (a) to Active (b) command period t_RRD
Transition time (rise to fall)
t_T
Refresh period
t _REF
PC100
Symbol
Tclk
Tclk
Tch
Tcl
Tac
Tac
Toh
Tsi
Thi
Tsi
Thi
Tsi
Tpde
Thi
Tsi
Thi
Trc
Tras
Trcd
Trp
Tdpl
Trrd
HB52R329E22
-A6F/B6F
Min
Max
10
—
10
—
4
—
4
—
—
7.5
—
7.5
2.1
—
1.1
—
—
7.5
2.9
—
3.4
—
2.6
—
3.0
—
2.6
—
2.6
—
3.0
—
2.6
—
3.0
—
70
—
50
120000
20
—
20
—
10
—
20
—
1
5
—
64
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Notes
1
1
1
1, 2
1, 2
1, 2, 3
1, 4
1
1
1
1
1, 5
1
1
1
1
1
1
1
1
1
1
Data Sheet No. E0112H10
18