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| HB52R329E22-F Datasheet, PDF (28/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM | |||
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HB52R329E22-F
Current state
Read
S RE CE W
HÃ
Ã
Ã
L H HH
L H HL
LHLH
LHLL
L
L
HH
L
L
HL
Read with auto-
precharge
L
L
L
H
L
L
L
L
HÃ
Ã
Ã
L H HH
L H HL
LHLH
LHLL
L
L
HH
Write
L
L
HL
L
L
L
H
L
L
L
L
HÃ
Ã
Ã
L H HH
L H HL
LHLH
LHLL
L
L
HH
L
L
HL
L
L
L
H
Address Command
Operation
Ã
DESL
Continue burst to end
Ã
NOP
Continue burst to end
Ã
BST
Burst stop to full page
BA, CA, A10 READ/READ A Continue burst read to CE
latency and New read
BA, CA, A10 WRIT/WRIT A Term burst read/start write
BA, RA
ACTV
Other bank active
ILLEGAL on same bank*3
BA, A10
PRE, PALL
Term burst read and
Precharge
Ã
REF, SELF
ILLEGAL
MODE
MRS
ILLEGAL
Ã
DESL
Continue burst to end and
precharge
Ã
NOP
Continue burst to end and
precharge
Ã
BST
ILLEGAL
BA, CA, A10 READ/READ A ILLEGAL*4
BA, CA, A10 WRIT/WRIT A ILLEGAL*4
BA, RA
ACTV
Other bank active
ILLEGAL on same bank*3
BA, A10
PRE, PALL
ILLEGAL*4
Ã
REF, SELF
ILLEGAL
MODE
MRS
ILLEGAL
Ã
DESL
Continue burst to end
Ã
NOP
Continue burst to end
Ã
BST
Burst stop on full page
BA, CA, A10 READ/READ A Term burst and New read
BA, CA, A10 WRIT/WRIT A Term burst and New write
BA, RA
ACTV
Other bank active
ILLEGAL on same bank*3
BA, A10
PRE, PALL
Term burst write and
Precharge*2
Ã
REF, SELF
ILLEGAL
Data Sheet No. E0112H10
28
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