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HB52R329E22-F Datasheet, PDF (17/66 Pages) Elpida Memory – 256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
HB52R329E22-F
Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)
Parameter
Symbol
Max
Unit
Notes
Input capacitance (Address)
CI1
25
pF
1, 2, 4
Input capacitance (RE, CE, W)
CI2
25
pF
1, 2, 4
Input capacitance (CKE)
CI3
45
pF
1, 2, 4
Input capacitance (S)
CI4
20
pF
1, 2, 4
Input capacitance (CK)
CI5
45
pF
1, 2, 4
Input capacitance (DQMB)
CI6
20
pF
1, 2, 4
Input/Output capacitance (DQ)
CI/O1
25
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
Data Sheet No. E0112H10
17