TLK111_14 Datasheet, PDF (85/110 Pages) Texas Instruments – PHYTER® Industrial Temperature 10/100Mbs Ethernet Physical Layer Transceiver

TLK111
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SLLSEF8B – AUGUST 2013 – REVISED JANUARY 2014
9.4 48-Pin Extended Temperature (125°C) Device Thermal Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
θ_JA
Junction-to-ambient thermal resistance (no airflow)
JEDEC high-K model
41.8
θ_JB
Junction-to-board thermal resistance
20.0
θ_JC
Junction-to-case thermal resistance
24.7
MAX UNIT
°C/W
9.5 DC CHARACTERISTICS, VDD_IO
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
3.3V VDD_IO
V_IH
Input high voltage
V_IL
Input low voltage
V_OL
Output low voltage
V_OH
Output high voltage
2.5V VDD_IO
Nominal VCC = 3.3V
I_OL = 4 mA
I_OH = –4 mA
VDD_IO = 3.3V ±10%
VDD_IO = 3.3V±10%
VDD_IO = 3.3V±10%
VDD_IO = 3.3V±10%
V_IH
Input high voltage
V_IL
Input low voltage
V_OL
Output low voltage
V_OH
Output high voltage
1.8V VDD_IO
I_OL = 2 mA
I_OH = –2 mA
VDD_IO = 2.5V±10%
VDD_IO = 2.5V±10%
VDD_IO = 2.5V±10%
VDD_IO = 2.5V±10%
V_IH
Input high voltage
V_IL
Input low voltage
V_OL
Output low voltage
I_OL = 2 mA
V_OH
Output high voltage
I_OH = –2 mA
VDD_IO = 1.8V±10%
VDD_IO = 1.8V±10%
VDD_IO = 1.8V±10%
VDD_IO = 1.8V±10%
MIN TYP MAX UNIT
2.0
VDD_IO – 0.5
V
0.8 V
0.4 V
V
1.5
VDD_IO – 0.4
V
0.5 V
0.4 V
V
1.3
VDD_IO – 0.4
V
0.45 V
0.4 V
V
9.6 DC CHARACTERISTICS, SD_IN
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V_IH
Input high voltage
VDD_IO = 3.3V +10%
V_IL
Input low voltage
V_IH
Input high voltage
VDD_IO = 3.3V
V_IL
Input low voltage
V_IH
Input high voltage
VDD_IO = 3.3V –10%
V_IL
Input low voltage
MIN TYP MAX UNIT
2.38
V
2.14 V
2.08
V
1.84 V
1.78
V
1.54 V
9.7 DC CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
I_IH
I_IL
I_OZ
R_PULLUP
R_PULLDOWN
V_{TPTD_100}
V_TPTDsym
V_{TPTD_10}
C_IN1
Input high current
Input low current
3-State leakage
Integrated Pullup Resistance
Integrated Pulldown Resistance
100M transmit voltage
100M transmit voltage symmetry
10M transmit voltage
CMOS input capacitance
V_IN = V_CC
V_IN = GND
V_OUT = V_CC, V_OUT = GND
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Product Folder Links: TLK111
MIN
14.7
14.5
0.95
2.2
TYP MAX
10
10
±10
23.7 49.7
24.9 48.1
1 1.05
±2%
2.5 2.8
5
UNIT
μA
μA
μA
kΩ
kΩ
V
V
pF
Electrical Specifications
85