LM3S101 Datasheet, PDF (407/445 Pages) List of Unclassifed Manufacturers – Microcontroller

Stellaris^® LM3S101 Microcontroller
16.1.6
16.2
16.2.1
Table 16-5. Detailed Power Specifications
Parameter Parameter Name
Conditions
Run mode 1 (Flash loop) LDO = 2.50 V
Code = while(1){} executed out of Flash
Peripherals = All clock-gated ON
System Clock = 20 MHz (with PLL)
Run mode 2 (Flash loop) LDO = 2.50 V
Code = while(1){} executed out of Flash
Peripherals = All clock-gated OFF
I_{DD_RUN}
Run mode 1 (SRAM
loop)
System Clock = 20 MHz (with PLL)
LDO = 2.50 V
Code = while(1){} executed in SRAM
Peripherals = All clock-gated ON
System Clock = 20 MHz (with PLL)
Run mode 2 (SRAM
loop)
LDO = 2.50 V
Code = while(1){} executed in SRAM
Peripherals = All clock-gated OFF
System Clock = 20 MHz (with PLL)
I_{DD_SLEEP} Sleep mode
LDO = 2.50 V
Peripherals = All clock-gated OFF
System Clock = 20 MHz (with PLL)
I_{DD_DEEPSLEEP} Deep-Sleep mode
LDO = 2.25 V
Peripherals = All OFF
System Clock = MOSC/16
Nom Max Unit
45
50
mA
25
30
mA
40
45
mA
20
25
mA
17
20
mA
800 1000
μA
Flash Memory Characteristics
Table 16-6. Flash Memory Characteristics
Parameter Parameter Name
Min
PE_CYC
Number of guaranteed program/erase cycles
before failure^a
10,000
T_RET
Data retention at average operating temperature
10
of 85˚C (industrial) or 105˚C (extended)
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Nom
Max
100,000
-
-
-
-
-
-
-
-
250
Unit
cycles
years
µs
ms
ms
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
July 14, 2014
407
Texas Instruments-Production Data