K4G323222A Datasheet, PDF (6/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
CMOS SGRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C, VIH(min)/VIL(max)=2.0V/0.8V)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
ICC1
Burst Length =1
tRC ≥ tRC(min), tCC ≥ tCC(min), Io =
0mA
CAS
Latency _-45
Speed
-50 -7C -60
Unit Note
-70
3 220 200 - 180 160
mA 2
2 150 150 200 150 150
Precharge Standby Current ^ICC2P
in power-down mode
ICC2PS
CKE ≤ VIL(max), tCC = 15ns
CKE & CLK ≤ VIL(max), tCC = ∞
2
mA
2
ICC2N
Precharge Standby Current
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
30
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
mA
Active Standby Current
in power-down mode
ICC3P
ICC3PS
CKE ≤ VIL(max), tCC = 15ns
CKE ≤ VIL(max), tCC = ∞
4
mA
4
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
50
in non power-down mode
mA
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
30
Operating Current
(Burst Mode)
ICC4
Io = 0 mA, Page Burst
All bank Activated, tCCD = tCCD(min)
3 310 290 - 260 230
mA 2
2 160 160 290 160 160
Refresh Current
ICC5
tRC ≥ tRC(min)
3 260 240 - 220 200
mA 3
2 190 190 240 190 190
Self Refresh Current
ICC6
CKE ≤ 0.2V
2
mA 4
450
uA 5
Operating Current
(One Bank Block Write)
ICC7
tCC ≥ tCC(min), Io=0mA, tBWC(min)
250 230 230 200 170 mA
Note : ^{1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL.}
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
4. K4G323222A-C*
5. K4G323222A-L* : Low Power version
Rev. 1.3 (Dec. 2000)
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