K4G323222A Datasheet, PDF (37/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
Read & Write Cycle with Auto Precharge II @Burst Length=4
CMOS SGRAM
CLOCK
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
HIGH
CS
RAS
CAS
ADDR
Ra
Rb Ca
Cb
Ra
Ca
BA
A8/AP
Ra
Rb
Ra
WE
DSF
DQM
DQ
(CL=2)
DQ
(CL=3)
Qa0 Qa1 Qb0 Qb1 Qb2 Qb3
Qa0 Qa1 Qb0 Qb1 Qb2 Qb3
Da0 Da1
Da0 Da1
Row Active
(A-Bank)
Read with
Auto Pre
charge
(A-Bank)
Row Active
(B-Bank)
Read without Auto
precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank) *Note 1
Precharge
(B-Bank)
Row Active
(A-Bank)
Write with
Auto Precharge
(A-Bank)
: Don′t care
*Note:
1. When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
auto precharge will start at B Bank read command input point .
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
Rev. 1.3 (Dec. 2000)
- 37