K4G323222A Datasheet, PDF (35/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
Read & Write Cycle at Different Bank @Burst Length=4
CMOS SGRAM
CLOCK
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
RBb
BA
A8/AP
RAa
RBb
WE
DSF
CBb RAc
CAc
RAc
tCDL
*Note 1
DQM
DQ
(CL=2)
DQ
(CL=3)
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1 QAc2
QAc0 QAc1
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
Row Active
(B-Bank)
Write
(B-Bank)
Row Active
(A-Bank)
Read
(A-Bank)
*Note : 1. tCDL should be met to complete write.
- 35
: Don′t care
Rev. 1.3 (Dec. 2000)