K4G323222A Datasheet, PDF (28/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
CMOS SGRAM
*Note : 1. All input can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3. Enable and disable auto precharge function are controlled by A8/AP in read/write command.
A8/AP
0
1
BA
Operation
0 Disable auto precharge, leave bank A active at end of burst.
1 Disable auto precharge, leave bank B active at end of burst.
0 Enable auto precharge, precharge bank A at end of burst.
1 Enable auto precharge, precharge bank B at end of burst.
4. A8/AP and BA control bank precharge when precharge command is asserted.
A8/AP BA
0
0
0
1
1
X
Precharge
Bank A
Bank B
Both Bank
5. Block write/normal write is controlled by DSF.
DSF
L
H
Operation
Normal write
Block write
Minimum cycle time
tCCD
tBWC
Rev. 1.3 (Dec. 2000)
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