K4G323222A Datasheet, PDF (38/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
Read & Write Cycle with Auto Precharge III @Burst Length=4
CMOS SGRAM
CLOCK
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
HIGH
CS
RAS
CAS
ADDR
Ra
Ca
Rb
Cb
BA
A8/AP
Ra
Rb
WE
DSF
DQM
DQ
(CL=2)
Qa0 Qa1 Qa2 Qa3
Qb0 Qb1 Qb2 Qb3
DQ
(CL=3)
Row Active
(A-Bank)
Read with
Auto Precharge
(A-Bank)
Qa0 Qa1 Qa2 Qa3
*Note 1
Auto Precharge
Start Point
(A-Bank)
Row Active
(B-Bank)
Read with
Auto Precharge
(B-Bank)
*Note : 1. Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
Qb0 Qb1 Qb2 Qb3
Auto Precharge
Start Point
(B-Bank)
: Don′t care
Rev. 1.3 (Dec. 2000)
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