K4G323222A Datasheet, PDF (39/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
CMOS SGRAM
Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Full page Only)
CLOCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
BA
A8/AP
RAa
CAa
*Note 1
CAb
*Note 1
WE
DSF
DQM
DQ
(CL=2)
DQ
(CL=3)
*Note 2
1
QAa0 QAa1 QAa2 QAa3 QAa4
2
QAa0 QAa1 QAa2 QAa3 QAa4
1
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
2
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
Row Active
(A-Bank)
Read
(A-Bank)
Burst Stop Read
(A-Bank)
Precharge
(A-Bank)
*Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ′s after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
: Don′t care
Rev. 1.3 (Dec. 2000)
- 39