K4G323222A Datasheet, PDF (43/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length=4
CMOS SGRAM
CLOCK
CKE
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tSS
*Note 1
*Note 2
tSS
tSS tSS
*Note 3
RAS
CAS
ADDR
Ra
Ca
BA
A8/AP
Ra
WE
DSF
DQM
DQ
Qa0 Qa1 Qa2
Precharge
Power-down
Entry
Precharge
Power-down
Exit
Row Active
Read
Active
Power-down
Entry
Active
Power-down
Exit
*Note : 1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least "1CLK + tSS" prior to Row active command.
3. Cannot violate minimum refresh specification. (32ms)
- 43
Precharge
: Don′t care
Rev. 1.3 (Dec. 2000)