K4G323222A Datasheet, PDF (40/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
CMOS SGRAM
Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Full page Only)
CLOCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA
A8/AP
RAa
WE
DSF
DQM
DQ
*Note 1
*Note 1
tBDL
tRDL *Note 5
*Note 2
DAa0 DAa1 DAa2 DAa3 DAa4
*Note 3
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
Row Active
(A-Bank)
Write
(A-Bank)
Burst Stop Write
(A-Bank)
Precharge
(A-Bank)
: Don′t care
*Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of burst stop command cannot be written into the corresponding memory cell.
It is defined by AC parameter of tBDL(=1CLK).
3. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of tRDL(=2CLK).
DQM at write interrupted by precharge command is needed to ensure tRDL of 2CLK.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
4. Burst stop is valid only at full page burst length.
5. For -60/70 devices, tRDL can be programmed as 1CLK if Auto-Precharge is not used in the design
Rev. 1.3 (Dec. 2000)
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