K4G323222A Datasheet, PDF (36/49 Pages) Samsung semiconductor – 32Mbit SGRAM

K4G323222A
Read & Write Cycle with Auto Precharge I @Burst Length=4
CMOS SGRAM
CLOCK
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
HIGH
CS
RAS
CAS
ADDR
RAa
RBb CAa
CBb
BA
A8/AP
RAa
RBb
WE
DSF
DQMi
DQ
(CL=2)
DQ
(CL=3)
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
Row Active
(A-Bank)
Read with
Auto Precharge
(A-Bank)
Row Active
(B-Bank)
Auto Precharge
Start Point
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Auto Precharge
Start Point
(B-Bank)
: Don′t care
*Note : 1. tRCD should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length=1 & 2, BRSW mode and Block write)
- 36
Rev. 1.3 (Dec. 2000)