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PIC16F946 Datasheet, PDF (239/274 Pages) Microchip Technology – 64-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt Technology
PIC16F946
19.4 DC Characteristics: PIC16F946-I (Industrial), PIC16F946-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ† Max Units
Conditions
Capacitive Loading Specs
on Output Pins
D100 COS OSC2 pin
C2
—
—
15*
pF In XT, HS and LP modes
when external clock is used to
drive OSC1
D101 CIO All I/O pins
—
—
50*
pF
Data EEPROM Memory
D120 ED Byte Endurance
100K
1M
— E/W -40°C ≤ TA ≤ +85°C
D120A ED Byte Endurance
10K
100K — E/W +85°C ≤ TA ≤ +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
5
6
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other specifica-
tions are violated
D124 TREF Number of Total Erase/Write
1M
10M — E/W -40°C ≤ TA ≤ +85°C
Cycles before Refresh(2)
Program Flash Memory
D130 EP Cell Endurance
10K
100K — E/W -40°C ≤ TA ≤ +85°C
D130A ED Cell Endurance
1K
10K — E/W +85°C ≤ TA ≤ +125°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VPEW VDD for Erase/Write
4.5
—
5.5
V
D133 TPEW Erase/Write cycle time
—
2
2.5 ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other specifica-
tions are violated
*
†
Note 1:
2:
3:
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
In RC oscillator configuration, the OSC1/CLKI pin is a Schmitt Trigger input. It is not recommended to use an
external clock in RC mode.
Negative current is defined as current sourced by the pin.
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
© 2005 Microchip Technology Inc.
Preliminary
DS41265A-page 237