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IC43R16160 Datasheet, PDF (9/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160
Output Data (DQ) and Data Strobe (DQS) Timing Relative to the Clock (CK)
During Read Cycles
(CAS Latency = 2.5; Burst Length = 4)
T0
T1
T2
T3
T4
CK, CK
Command
READ
NOP
DQS
DQ
NOP
NOP
NOP
tDQSCK(max)
tDQSCK(min)
tAC(min)
tAC(max)
D0
D1
D2
D3
The minimum time during which the output data (DQ) is valid is critical for the receiving device (i.e., a mem-
ory controller device). This also applies to the data strobe during the read cycle since it is tightly coupled to
the output data. The minimum data output valid time (tDV) and minimum data strobe valid time (tDQSV) are de-
rived from the minimum clock high/low time minus a margin for variation in data access and hold time due to
DLL jitter and power supply noise.
Integrated Circuit Solution Inc.
9
DDR001-0B 11/10/2004