IC43R16160 Datasheet, PDF (53/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
Figure 46 - WRITE - WITH AUTO PRECHARGE
/CK
CK
tIS tIH
CKE
tIS tIH
tCK
tCH tCL
VALID
VALID
VALID
COMMAND
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
tIS tIH
x4:A0-A9
x8:A0-A8
Col n
RA
x16:A0-A7
x4:A11
x8:A9, A11
RA
x16:A8, A9, A11
EN AP
A10
RA
tIS tIH
BA0, BA1
Bank x
BA
tDAL
Case 1:
tDQSS = min
tDSH
tDQSS
tDQSH
tDSH
tWPST
DQS
tWPRES
tWPRE
tDQSL
DQ
DI
n
DM
Case 2:
tDQSS = max
DQS
DQ
DM
tDQSS
tWPRES
tWPRE
tDQSH
tDSS
tDSS
tWPST
tDQSL
DI
n
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n
EN AP = Enable Autoprecharge
ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
DON'T CARE
Integrated Circuit Solution Inc.
53
DDR001-0B 11/10/2004