IC43R16160 Datasheet, PDF (42/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
The above characteristics are specified under best, worst and normal process variation/conditions
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
90
80
Maximum
70
60
TypicalHigh
50
40
TypicalLow
30
Minimum
20
10
0
0.0
1.0
2.0
Vout(V)
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
Minumum
TypicalLow
TypicalHigh
Maximum
V_DDQ—Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
42
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004