IC43R16160 Datasheet, PDF (40/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
IBIS: I/V Characteristics for Input and Output Buffers
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
Maximum
160
140
120
TypicalHigh
100
80
TypicalLow
60
Minimum
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
Minumum
-20
-40
TypicalLow
-60
-80
-100
-120
-140
-160
TypicalHigh
-180
-200
-220
Maximum
V_DDQ—Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Voltage (V)
0.1
Pulldown Current (mA)
Typical Low Typical High Minimum
6.0
6.8
4.6
Maximum
9.6
Pullup Current (mA)
Typical Low Typical High Minimum
-6.1
-7.6
-4.6
Maximum
-10.0
40
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004