IC43R16160 Datasheet, PDF (4/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
Block Diagram
Column address
counter
16M x 16
Column Addresses
A0 - A8, AP, BA0, BA1
Row Addresses
A0 - A12, BA0, BA1
Column address
buffer
Row address
buffer
Row decoder
Memory array
Bank 0
8192 x 256
x32 bit
Row decoder
Memory array
Bank 1
8192 x 256
x 32 bit
Row decoder
Memory array
Bank 2
8192 x 256
x 32 bit
Refresh Counter
Row decoder
Memory array
Bank 3
8192 x 256
x 32 bit
Input buffer Output buffer
Control logic & timing generator
CK, CK
DLL
DQ₀-DQ₁₅
DQS
Strobe
Gen.
Data Strobe
Capacitance*
T_A = 0 to 70°C, V_CC = 2.5V ± 0.2V, V_CC = 2.6V ± 0.1V
for DDR400, f = 1 Mhz
Input Capacitance
Symbol Min Max Unit
BA0, BA1, CKE, CS, RAS, (CAS,
A0-A11, WE)
C_INI
2 3.0 pF
Input Capacitance (CK, CK)
Data & DQS I/O Capacitance
Input Capacitance (DM)
C_IN2 2 3.0 pF
C_OUT 4 5 pF
C_IN3 4 5.0 pF
*Note: Capacitance is sampled and not 100% tested.
Absolute Maximum Ratings*
Operating temperature range ..................0 to 70 °C
Storage temperature range ................-55 to 150 °C
V_DDSupply Voltage Relative to V_SS.....-1V to +3.6V
V_DDQ Supply Voltage Relative to V_SS
......................................................-1V to +3.6V
VREF and Inputs Voltage Relative to V_SS
......................................................-1V to +3.6V
I/O Pins Voltage Relative to V_SS
.......................................... -0.5V to V_DDQ+0.5V
Power dissipation .......................................... 1.6 W
Data out current (short circuit) ...................... 50 mA
*Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
4
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004