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IC43R16160 Datasheet, PDF (30/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
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IC43R16160
DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Supply voltage (for device with a nominal VDD of 2.5V)
Supply voltage (VDD of 2.6V for DDR400 device)
I/O Supply voltage
I/O Supply voltage for DDR400 device
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current (VOUT = 1.95V)
Output Low Current (VOUT = 0.35V)
Symbol
VDD
VDD
VDDQ
VDDQ
VREF
VTT
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC)
II
IOZ
IOH
IOL
Min
2.3
2.5
2.3
2.5
0.49*VDDQ
VREF-0.04
VREF+0.15
-0.3
-0.3
0.3
-2
-5
-16.8
16.8
Max
2.7
2.7
2.7
2.7
0.51*VDDQ
VREF+0.04
VDDQ+0.3
VREF-0.15
VDDQ+0.3
VDDQ+0.6
2
5
Unit
V
V
V
V
V
V
V
V
uA
uA
mA
mA
Note
1
2
3
Notes: 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-
to-peak noise on VREF may not exceed 2% of the DC value
2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
Table 11. DC operating condition
30
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004
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