IC43R16160 Datasheet, PDF (34/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
AC CHARACTERISTICS
PARAMETER
DQS write postamble
Write recovery time
Internal WRITE to READ
command delay
SYMBOL
t_WPST
t_WR
t_WTR
Data valid output window
na
Average periodic refresh interval
Terminating voltage delay to VDD
Exit SELF REFRESH to non-
READ command
t_REFI
t_VTD
t_XSNR
-5
MIN MAX
0.4 0.6
15
2
t_{QH -} t_DQSQ
7.8
0
200
-6
MIN MAX
0.4
15
2
t_{QH -} t_DQSQ
7.8
0
200
-7
MIN MAX
0.4
15
UNITS NOTES
t_CK
19
ns
2
t_CK
t_{QH -} t_DQSQ
ns
25
7.8
us
0
ns
200
t_CK
34
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004