IC43R16160 Datasheet, PDF (54/56 Pages) Integrated Circuit Solution Inc – 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

IC43R16160
/CK
CK
CKE
COMMAND
x4:A0-A9
x8:A0-A8
x16:A0-A7
x4:A11
x8:A9, A11
x16:A8, A9, A11
A10
tIS tIH
tIS tIH
NOP
BA0, BA1
Case 1:
tDQSS = min
DQS
DQ
DM
Figure 47 - BANK WRITE ACCESS
tCK
tCH tCL
ACT
tIS tIH
RA
RA
RA
tIS tIH
Bank x
NOP
NOP
WRITE
Col n
NOP
NOP
NOP
NOP
tRCD
tIS tIH
DIS AP
Bank x
tRAS
tDSH
tDQSS
tDQSH
tDSH
tWPST
tWPRES
tWPRE
tDQSL
DI
n
tWR
PRE
ALL BANKS
ONE BANK
*Bank x
Case 2:
tDQSS = max
DQS
DQ
DM
tDQSS
tWPRES
tWPRE
tDQSH
tDSS
tDSS
tWPST
tDQSL
DI
n
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
DON'T CARE
54
Integrated Circuit Solution Inc.
DDR001-0B 11/10/2004