HD6475328-CP10 Datasheet, PDF (313/459 Pages) Hitachi Semiconductor – original Hitachi CMOS microcomputer unit (MCU)

Table 17-5 DC Characteristics
(When VCC = 6.0V ±0.25V, VPP = 12.5V ±0.3V, VSS = 0V, Ta = 25˚C ±5˚C)
Item
Input High voltage
Input Low voltage
Input High voltage
Input Low voltage
Input leakage
current
VCC current
VPP current
O7 to O0, A14 to A0, OE, CE
O7 to O0, A14 to A0, OE, CE
O7 to O0
O7 to O0
O7 to O0, A14 to A0, OE, CE
Sym-
bol Min Typ Max
VIH 2.4 — VCC + 0.3
VIL –0.3 — 0.8
VOH 2.4 — —
VOL — — 0.45
|ILI| — — 2
ICC — — 40
IPP — — 40
Unit
V
V
V
V
µA
mA
mA
Measurement
Conditions
IOH =
–200µA
IOL = 1.6mA
Vin =
5.25V/0.5V
Table 17-6 AC Characteristics
(When VCC = 6.0V ±0.25V, VPP = 12.5V ±0.3V, Ta = 25˚C ±5˚C)
Sym-
Item
bol Min Typ Max
Address setup time
tAS 2 — —
OE setup time
tOES 2 — —
Data setup time
tDS 2 — —
Address hold time
tAH 0 — —
Data hold time
tDH 2 — —
Data output disable time
tDF — — 130
VPP setup time
tVPS 2 — —
Program pulse width
tPW 0.95 1.0 1.05
OE pulse width for
tOPW 2.85 — 78.75
overwrite-programming
VCC setup time
tVCS 2 — —
Data output delay time
tOE 0 — 500
* Input pulse level: 0.8V to 2.2V
Input rise/fall time ≤ 20ns
Timing reference levels: input—1.0V, 2.0V; output—0.8V, 2.0V
Measurement
Unit Conditions
µs See figure
µs 17-5*
µs
µs
µs
µs
µs
ms
ms
µs
ns
301