MC9S12C Datasheet, PDF (662/680 Pages) Motorola, Inc – 16-Bit Microcontroller

Appendix A Electrical Characteristics
A.5.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures. The program/erase cycle count on the sector is
incremented every time a sector or mass erase event is executed.
Table A-19. NVM Reliability Characteristics⁽¹⁾
Conditions are shown in Table A-4. unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1 C Data retention after 10,000 program/erase cycles at an
average junction temperature of T_Javg ≤ 85°C
t_FLRET
15
100⁽²⁾
—
Years
2 C Data retention with <100 program/erase cycles at an
average junction temperature T_Javg ≤ 85°C
20
100²
—
3 C Number of program/erase cycles
(–40°C ≤ T_J ≤ 0°C)
n_FL
10,000
—
—
Cycles
4 C Number of program/erase cycles
10,000 100,000⁽³⁾
—
(0°C ≤ T_J ≤ 140°C)
1. T_Javg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618.
3. Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to
Engineering Bulletin EB619.
662
MC9S12C-Family / MC9S12GC-Family
Freescale Semiconductor
Rev 01.23