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MC9S12C Datasheet, PDF (660/680 Pages) Motorola, Inc – 16-Bit Microcontroller
Appendix A Electrical Characteristics
A.5.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on the
frequency f¨NVMOP and can be calculated according to the following formula.
tswpgm = 9 ⋅ f--N----V----1M-----O----P-- + 25 ⋅ -f-b--1--u---s-
A.5.1.2 Row Programming
Generally the time to program a consecutive word can be calculated as:
tbwpgm = 4 ⋅ f--N----V----1M-----O----P-- + 9 ⋅ f--b--1--u---s-
For the C16, GC16, C32 and GC32 device flash arrays, where up to 32 words in a row can be programmed
consecutively by keeping the command pipeline filled, the time to program a whole row is:
tbrpgm = tswpgm + 31 ⋅ tbwpgm
For the C64, GC64, C96, C128 and GC128 device flash arrays, where up to 64 words in a row can be
programmed consecutively by keeping the command pipeline filled, the time to program a whole row is:
tbrpgm = tswpgm + 63 ⋅ tbwpgm
Row programming is more than 2 times faster than single word programming.
A.5.1.3 Sector Erase
Erasing either a 512 byte or 1024 byte Flash sector takes:
tera ≈ 4000 ⋅ f--N----V----1M-----O----P--
The setup times can be ignored for this operation.
A.5.1.4 Mass Erase
Erasing a NVM block takes:
tmass ≈ 20000 ⋅ f--N----V----1M-----O----P--
This is independent of sector size.
The setup times can be ignored for this operation.
660
MC9S12C-Family / MC9S12GC-Family
Freescale Semiconductor
Rev 01.23