LM3S6110 Datasheet, PDF (566/610 Pages) Texas Instruments – Stellaris® LM3S6110 Microcontroller

Electrical Characteristics
18.1.7
18.2
18.2.1
Table 18-6. Flash Memory Characteristics (continued)
Parameter Parameter Name
Min
T_RET
Data retention at average operating
10
temperature of 85˚C
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Ethernet Controller
Nom
Max
-
-
-
-
-
-
-
250
Unit
years
µs
ms
ms
Table 18-7. Ethernet Controller DC Characteristics
Parameter
R_EBIAS
Parameter Name
Value of the pull-down resistor on the ERBIAS pin
Value
12.4K ± 1 %
Unit
Ω
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 18-1. Load Conditions
pin
C_L = 50 pF
GND
18.2.2
Clocks
Table 18-8. Phase Locked Loop (PLL) Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
f_{ref_crystal}
Crystal reference^a
3.579545
-
8.192
MHz
f_{ref_ext}
f_pll
External clock reference^a
PLL frequency^b
3.579545
-
-
400
8.192
-
MHz
MHz
T_READY
PLL lock time
-
-
0.5
ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
(RCC) register.
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 18-9 on page 567 shows the actual frequency of the PLL based on the crystal frequency used
(defined by the XTAL field in the RCC register).
566
June 18, 2012
Texas Instruments-Production Data