C8051F336_08 Datasheet, PDF (31/227 Pages) Silicon Laboratories – Mixed-Signal Byte-Programmable EPROM MCU

C8051F336/7/8/9
Table 6.6. Internal High-Frequency Oscillator Electrical Characteristics
V_DD = 2.7 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
IFCN = 11b
24
24.5
25
Oscillator Supply Current
(from V_DD)
25 °C, V_DD = 3.0 V,
OSCICN.7 = 1,
OCSICN.5 = 0
—
450
600
Power Supply Sensitivity
Temperature Sensitivity
Constant Temperature
Constant Supply
—
0.12
—
—
60
—
Units
MHz
µA
%/V
ppm/°C
Table 6.7. Internal Low-Frequency Oscillator Electrical Characteristics
V_DD = 2.7 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
Oscillator Supply Current
(from V_DD)
Power Supply Sensitivity
OSCLD = 11b
25 °C, V_DD = 3.0 V,
OSCLCN.7 = 1
Constant Temperature
72
80
88
—
5.5
10
—
2.4
—
Temperature Sensitivity
Constant Supply
—
30
—
Units
kHz
µA
%/V
ppm/°C
Rev.1.0
31