JN516X Datasheet, PDF (67/94 Pages) NXP Semiconductors – IEEE802.15.4 Wireless Microcontroller

19.3.9 32kHz Crystal Oscillator
VDD = 2.0 to 3.6V, -40 to +125ºC, italic +85 ºC Bold +125 ºC
Parameter
Min
Typ
Max
Current consumption of cell
and counter logic
1.4
1.75, 2.0
Start – up time
0.6
Input capacitance
1.4
Transconductance
18.5
External Capacitors
15
(CL=9pF)
Amplitude at Xout
Vdd-0.2
19.3.10 32MHz Crystal Oscillator
VDD = 2.0 to 3.6V, -40 to +125ºC, italic +85 ºC Bold +125 ºC
Parameter
Min
Typ
Max
Current consumption
Start – up time
300
375
450, 500
0.74
Input capacitance
Transconductance
DC voltages,
XTALIN/XTALOUT
External Capacitors
(CL=9pF)
3.65, 3.55
390/432
375/412
1.4
4.30
425/472
15
5.16
470/527
Amplitude detect threshold
320
Unit
µA
s
pF
µA/V
pF
Vp-p
Notes
This is sensitive to the ESR
of the crystal, Vdd and total
capacitance at each pin
Assuming xtal with ESR of
less than 40kohms and
CL= 9pF External caps =
15pF
(Vdd/2mV pk-pk) see
Appendix B
Bondpad and package
Total external capacitance
needs to be 2*CL, allowing
for stray capacitance from
chip, package and PCB
Unit
µA
ms
pF
mA/V
mV
Notes
Excluding bandgap ref.
Assuming xtal with ESR of
less than 40ohms and CL=
9pF External caps = 15pF
see Appendix B
Bondpad and package
pF
mVp-p
Total external capacitance
needs to be 2*CL, allowing
for stray capacitance from
chip, package and PCB
Threshold detection
accessible via API
© NXP Laboratories UK 2013
JN-DS-JN516x v1.1 Production
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