MC908QY8CDWE Datasheet, PDF(228/232 Page) Freescale Semiconductor, Inc – Addendum to MC68HC908QB8, rev. 3

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MC908QY8CDWE Datasheet, PDF (228/232 Pages) Freescale Semiconductor, Inc – Addendum to MC68HC908QB8, rev. 3

◁

Electrical Specifications

18.17 Memory Characteristics

Characteristic

RAM data retention voltage (2)

FLASH program bus clock frequency

Symbol

VRDR

â

Min

Typ(1)

Max

Unit

1.3

â

â

V

1

â

â

MHz

FLASH PGM/ERASE supply voltage (VDD)

FLASH read bus clock frequency

FLASH page erase time

<1 K cycles

>1 K cycles

VPGM/ERASE

2.7

â

5.5

V

fRead(3)

0

â

8M

Hz

tErase

0.9

1

1.1

ms

3.6

4

5.5

FLASH mass erase time

FLASH PGM/ERASE to HVEN setup time

FLASH high-voltage hold time

FLASH high-voltage hold time (mass erase)

FLASH program hold time

FLASH program time

FLASH return to read time

FLASH cumulative program HV period

FLASH endurance(6)

FLASH data retention time(7)

tMErase

tNVS

tNVH

tNVHL

tPGS

tPROG

tRCV(4)

tHV(5)

â

â

4

10

5

100

5

30

1

â

10 k

15

â

â

â

â

â

â

â

â

100 k

100

â

ms

â

Î¼s

â

Î¼s

â

Î¼s

â

Î¼s

40

Î¼s

â

Î¼s

4

ms

â

Cycles

â

Years

1. Typical values are for reference only and are not tested in production.

2. Values are based on characterization results, not tested in production.

3. fRead is defined as the frequency range for which the FLASH memory can be read.

4. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-

ing HVEN to 0.

5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.

tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG x 32) â¤ tHV maximum.

6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor

defines Typical Endurance, please refer to Engineering Bulletin EB619.

7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated

to 25â¢C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data

Retention, please refer to Engineering Bulletin EB618.

MC68HC908QB8 Data Sheet, Rev. 3

226

Freescale Semiconductor

▷