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SAM4L_14 Datasheet, PDF (120/176 Pages) ATMEL Corporation – Technology for Ultra-low Power Consumption
ATSAM4L8/L4/L2
Table 9-20. High Drive TWI Pin Characteristics in GPIO configuration (1)
Symbol
RPULLUP
RPULLDOWN
VIL
VIH
VOL
VOH
IOL
IOH
tRISE
Parameter
Pull-up resistance (2)
Pull-up resistance(2)
Input low-level voltage
Input high-level voltage
Output low-level voltage
Output high-level voltage
Output low-level current (3)
Output high-level current(3)
Rise time(2)
Conditions
ODCR0=0
ODCR0=1
ODCR0=0
ODCR0=1
OSRR0=0
OSRR0=1
OSRR0=0
OSRR0=1
1.68V<VVDD<2.7V
2.7V<VVDD<3.6V
1.68V<VVDD<2.7V
2.7V<VVDD<3.6V
1.68V<VVDD<2.7V
2.7V<VVDD<3.6V
1.68V<VVDD<2.7V
2.7V<VVDD<3.6V
ODCR0=0
1.68V<VVDD<2.7 V,
Cload = 25pF
ODCR0=0
2.7V<VVDD<3.6 V,
Cload = 25pF
Min
Typ
Max
Units
40
kΩ
40
kΩ
-0.3
0.8 * VVDD
0.2 * VVDD
VVDD + 0.3
V
0.4
VVDD - 0.4
3.4
mA
6
5.2
mA
8
3.4
mA
6
5.2
mA
8
18
ns
110
10
ns
50
tFALL
Fall time(2)
OSRR0=0
OSRR0=1
OSRR0=0
OSRR0=1
ODCR0=0
1.68V<VVDD<2.7 V,
Cload = 25pF
ODCR0=0
2.7V<VVDD<3.6 V,
Cload = 25pF
19
ns
140
12
ns
63
1.
VVDD corresponds to either VVDDIN or VVDDIO, depending on the supply for the pin. Refer to Section 3-5 on page 13 for details
2.
These values are based on simulation. These values are not covered by test limits in production or characterization
3.
These values are based on characterization. These values are not covered by test limits in production
Table 9-21. Common High Drive TWI Pin Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Units
ILEAK
CIN
Input leakage current (1)
Input capacitance(1)
Pull-up resistors disabled
0.01
2
µA
10
pF
1.
These values are based on simulation. These values are not covered by test limits in production or characterization
42023GS–SAM–03/2014
120