DS90UH927Q-Q1 Datasheet, PDF (5/68 Pages) Texas Instruments – 5-MHz to 85-MHz 24-Bit Color FPD-Link III Serializer with HDCP

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DS90UH927Q-Q1
SNLS433C – NOVEMBER 2012 – REVISED JANUARY 2015
Pin Functions (continued)
PIN
NAME
NO.
POWER AND GROUND⁽¹⁾
GND
DAP
VDD33_A
19
VDD33_B
26
VDDIO
7, 24
REGULATOR CAPACITOR
CAPP12
12
CAPHS12
14
CAPLVD12
28
CAPL12
8
OTHER
RES[1:0]
15, 13
I/O, TYPE
DESCRIPTION
Ground
Power
Large metal contact at the bottom center of the device package Connect to the ground
plane (GND) with at least 9 vias.
Power to on-chip regulator 3.0 V - 3.6 V. Each pin requires a 4.7 µF capacitor to GND
Power LVCMOS I/O Power 1.8 V ±5% OR 3.0 V - 3.6 V. Each pin requires 4.7 µF capacitor to GND
CAP
CAP
Decoupling capacitor connection for on-chip regulator
Each requires a 4.7-µF decoupling capacitor to GND.
Decoupling capacitor connection for on-chip regulator
Requires two 4.7-µF decoupling capacitors to GND
GND
Reserved
Connect to GND.
(1) The V_DD (V_DD33 and V_DDIO) supply ramp should be faster than 1.5 ms with a monotonic rise.
6 Specifications
6.1 Absolute Maximum Ratings^(1)(2)(3)
Supply Voltage – V_DD33(4)
Supply Voltage – V_DDIO(4)
LVCMOS I/O Voltage
Serializer Output Voltage
Junction Temperature
Storage Temperature, T_stg
MIN
−0.3
−0.3
−0.3
−0.3
−65
MAX
4.0
4.0
(V_DDIO +
0.3)
2.75
150
150
UNIT
V
V
V
V
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For soldering specifications, see product folder at www.ti.com and www.ti.com/lit/an/snoa549c/snoa549c.pdf.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4) The DS90UH927Q-Q1 V_DD33 and V_DDIO voltages require a specific ramp rate during power up. The power supply ramp time must be
less than 1.5 ms with a monotonic rise
6.2 ESD Ratings
V_(ESD)
Electrostatic
discharge
Human body model (HBM), per AEC Q100-002⁽¹⁾
Charged device model (CDM), per AEC Q100-011
Machine model (MM)
(IEC 61000-4-2, powered-up only)
R_D = 330 Ω, C_S = 150 pF
Air Discharge
(Pin 16 and 17)
Contact Discharge
(Pin 16 and 17)
(ISO 10605)
R_D = 330 Ω, C_S = 150 pF/330 pF
R_D = 2 kΩ, C_S = 150 pF/330 pF
Air Discharge
(Pin 16 and 17)
Contact Discharge
(Pin 16 and 17)
VALUE
±8000
±1250
±250
±15000
±8000
±15000
±8000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
V
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