K4R881869M Datasheet, PDF (60/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M
Center-Bonded uBGA Package
Figure 61 shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class.
Preliminary
Direct RDRAM^™
D
A B C D E F G H J ^{K LMN P R S YU}
10
9
Bottom
Top
Bottom
8
7
6
A
5
4
3
e2
2
1
E1
d e1
E
Figure 61: Center-Bonded uBGA Package
Bottom
Table 27 lists the numerical values corresponding to dimen-
sions shown in Figure 61.
Table 27: Center-Bonded uBGA Package Dimensions
Symbol
e1
e2
A
D
E
E1
d
Parameter
Ball pitch (x-axis)
Ball pitch (y-axis)
Package body length
Package body width
Package total thickness
Ball height
Ball diameter
Min
0.80
0.80
10.40
17.40
-
0.20
0.30
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
Max
0.80
0.80
10.60
17.60
1.00^a
0.30
0.40
Unit
mm
mm
mm
mm
mm
mm
mm
Page 58
Rev. 0.9 Jan. 2000