K4R881869M Datasheet, PDF (58/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M
Capacitance and Inductance
Figure 60 shows the equivalent load circuit of the RSL and
CMOS pins. The circuit models the load that the device
presents to the Channel.
Pad
C_I
R_I
Pad
C_I
R_I
Pad
C_I,CMOS
L_I
L_I
L_I,CMOS
Preliminary
Direct RDRAM^™
DQA,DQB,RQ Pin
Gnd Pin
CTM,CTMN,
CFM,CFMN Pin
Gnd Pin
SCK,CMD Pin
Pad
C_I,CMOS,SIO
L_I,CMOS
Gnd Pin
SIO0,SIO1 Pin
Figure 60: Equivalent Load Circuit for RSL Pins
Gnd Pin
Page 56
Rev. 0.9 Jan. 2000