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K4R881869M Datasheet, PDF (33/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary
Direct RDRAM™
SA11..SA0
04416
Register
CCB
04516
NAPX
04616
04716
04816
PDNXA
PDNX
TPARM
04916
04a16
04c16
04b16
TFRM
TCDLY1
TCYCLE
SKIP
04d16-
04e16-
04f16-
08016 - 0ff16
TEST77
TEST78
TEST79
reserved
Field
CCB
ASYMB
NAPXA
NAPX
DQS
PDNXA
PDNX
TCAS
TCLS
TCDLY0
TFRM
TCDLY1
TCYCLE
AS
MSE
MS
TEST77
TEST78
TEST79
reserved
Table 16: Control Register Summary
read-write/ read-only Description
read-write, 7 bits
read-write, 2 bits
read-write, 5 bits
read-write, 5 bits
read-write, 1 bits
read-write, 13 bits
read-write, 13 bits
read-write, 2 bits
read-write, 2 bits
read-write, 3 bits
read-write, 4 bits
read-write, 3 bits
read-write, 14 bits
read-only, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 16 bits
read-write, 16 bits
read-write, 16 bits
vendor-specific
Current control B. Controls IOL output current for DQB.
Asymmetry control. Controls asymmetry of VOL/VOH swing for DQB.
NAP exit. Specifies length of NAP exit phase A.
NAP exit. Specifies length of NAP exit phase A + phase B.
DQ select. Selects CMD framing for NAP/PDN exit.
PDN exit. Specifies length of PDN exit phase A.
PDN exit. Specifies length of PDN exit phase A + phase B.
tCAS-C core parameter. Determines tOFFP datasheet parameter.
tCLS-C core parameter. Determines tCAC and tOFFP parameters.
tCDLY0-C core parameter. Programmable delay for read data.
tFRM-C core parameter. Determines ROW-COL packet framing interval.
tCDLY1-C core parameter. Programmable delay for read data.
tCYCLE datasheet parameter. Specifies cycle time in 64ps units.
Autoskip value established by the SETF command.
Manual skip enable. Allows the MS value to override the AS value.
Manual skip value.
Test register. Write with zero after SIO reset.
Test register. Do not read or write after SIO reset.
Test register. Do not read or write after SIO reset.
Vendor-specific test registers. Do not read or write after SIO reset.
Page 31
Rev. 0.9 Jan. 2000