K4R881869M Datasheet, PDF (6/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M
Preliminary
Direct RDRAM^™
DQB8..DQB0
9
RQ7..RQ5 or
ROW2..ROW0
3
1:8 Demux
CTM CTMN SCK,CMD SIO0,SIO1 CFM CFMN
2
2
RCLK
RQ4..RQ0 or
COL4..COL0
5
1:8 Demux
DQA8..DQA0
9
RCLK
Packet Decode
ROWR
ROWA
11 5 5 9
ROP DR BR R
AV
TCLK
Control Registers
RCLK
COLX
655
Packet Decode
COLC
5557
COLM
88
REFR Power Modes DEVID XOP DX BX COP DC BC C MB MA
M
S
Match
DM
Mux
Row Decode
PRER
ACT
Sense Amp
64x72
Internal DQB Data Path ₇₂
DRAM Core
64x72 512x128x144
Bank 0
72
Bank 1
9
9
Bank 2
Match
XOP Decode
PREX
Match
Write
Buffer
Mux Mux
Column Decode & Mask
PREC
RD, WR
64x72
72
Internal DQA Data Path
72
9
9
Bank 13
9
Bank 14
9
Bank 15
9
9
Bank 16
Bank 17
Bank 18
Bank 29
Bank 30
Bank 31
9
9
Figure 2: 288 Mbit Direct RDRAM Block Diagram
Page 4
Rev. 0.9 Jan. 2000