K4R881869M Datasheet, PDF (3/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M
Preliminary
Direct RDRAM^™
Overview
The Rambus Direct RDRAM™ is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 288Mbit Direct Rambus DRAMs (RDRAM®) are
extremely high-speed CMOS DRAMs organized as 16M
words by 18 bits. The use of Rambus Signaling Level (RSL)
technology permits 600MHz to 800MHz transfer rates while
using conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data trans-
fers at 1.25 ns per two bytes (10ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage/band-
width or for error correction.
Features
♦Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control/data buses for maximum efficiency
- Separate row and column control buses for easy
scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
♦Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
♦Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to active state
- Power-down self-refresh
♦Organization: 2Kbyte pages and 32 banks, x 18
- x18 organization allows ECC configurations or
increased storage and bandwidth
♦Used Rambus Signaling Level (RSL) for up to 800MHz oper-
ation
SAMSUNG 001
K4R88xx69A-Nxxx
Figure 1: Direct RDRAM CSP Package
Key Timing Parameters/Part Numbers
Organization
Bin
512Kx18x32s^a -CG6
-CK7
-CK8
Speed
I/O t_RAC (Row
Freq. Access
MHz Time) ns
600
53.3
711
45
800
45
Part Number
K4R881869M-N^bC^cG6
K4R881869M-NCK7
K4R881869M-NCK8
a.The “32s” designation indicates that this RDRAM core is composed of 32
banks which use a “split” bank architecture.
b.The “N” designator indicates the normal package
c.The “C” designator indicates that this RDRAM core uses Normal Power
Self Refresh.
The 288Mbit Direct RDRAMs are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile
add-in card and mobile applications.
Page 1
Rev. 0.9 Jan. 2000